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Tokyo, Japan

Susumu Nagayama

This inventor holds 19 USPTO granted patents. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 1987-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Susumu Nagayama. Retrieved from https://idiyas.com/inventor/susumu-nagayama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19

% Patents Active = 100.0

Average Co-Inventor Count = 4.6

ph-index = 14

Forward Citations = 564(Granted Patents)


Location History:

  • Setagaya, JP (1988)
  • Tokyo, JP (1987 - 1991)
  • Kanagawa, JP (1992)
  • Yokohama, JP (1992 - 1994)

Company Filing History:

goldMedal19 out of 16,652 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents

Years Active: 1987-1994

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19 patents (USPTO):Explore Patents
1. 5296405 - Method for photo annealing non-single crystalline semiconductor films (1994-03-22),
2. 5171710 - Method for photo annealing non-single crystalline semiconductor films (1992-12-15),
3. 5089426 - Method for manufacturing a semiconductor device free from electrical (1992-02-18),
4. 4986213 - Semiconductor manufacturing device (1991-01-22),
5. 4970369 - Electronic device manufacturing methods (1990-11-13),
6. 4970368 - Laser scribing method (1990-11-13),
7. 4937651 - Semiconductor device free from the current leakage through a (1990-06-26),
8. 4888305 - Method for photo annealing non-single crystalline semiconductor films (1989-12-19),
9. 4874920 - Electronic device manufacturing methods (1989-10-17),
10. 4847669 - Tandem photoelectric conversion device (1989-07-11),
11. 4826711 - Semiconductor manufacturing method and device (1989-05-02),
12. 4812415 - Method for making semiconductor device free from electrical short (1989-03-14),
13. 4806496 - Method for manufacturing photoelectric conversion devices (1989-02-21),
14. 4786607 - Method for manufacturing a semiconductor device free from current (1988-11-22),
15. 4725558 - Semiconductor defects curing method and apparatus (1988-02-16),

Certainly! Here is an article about inventor Susumu Nagayama:

Title: Unveiling the Innovations of Susumu Nagayama

Introduction: Susumu Nagayama, a prolific inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor processing with a remarkable portfolio of 19 patents.

Latest Patents: Among his recent achievements is the development of a groundbreaking method for photo annealing non-single crystalline semiconductor films. This innovation revolutionizes the manufacturing process by introducing a unique semiconductor layer treatment that showcases the Self-Enhanced Luminescence (SEL) effect, departing from the traditional Staebler-Wronski effect.

Career Highlights: Susumu Nagayama is a key figure at Semiconductor Energy Laboratory Co., Ltd., where his expertise and dedication have led to the successful implementation of cutting-edge technologies in semiconductor processing. His commitment to innovation and precision is evident in each of his patented inventions.

Collaborations: Nagayama's collaborative efforts with esteemed colleagues such as Shunpei Yamazaki and Kunio Suzuki have further enriched the research landscape in the semiconductor industry. Together, they have explored new frontiers and pushed the boundaries of technological advancement.

Conclusion: In conclusion, Susumu Nagayama stands as a shining example of ingenuity and perseverance in the realm of semiconductor processing. His trailblazing inventions continue to shape the future of technology, cementing his legacy as a visionary inventor in the global innovation community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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