Tokyo, Japan

Susumu Nagayama


Average Co-Inventor Count = 4.6

ph-index = 14

Forward Citations = 564(Granted Patents)


Location History:

  • Setagaya, JP (1988)
  • Tokyo, JP (1987 - 1991)
  • Kanagawa, JP (1992)
  • Yokohama, JP (1992 - 1994)

Company Filing History:


Years Active: 1987-1994

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19 patents (USPTO):Explore Patents

Certainly! Here is an article about inventor Susumu Nagayama:

Title: Unveiling the Innovations of Susumu Nagayama

Introduction: Susumu Nagayama, a prolific inventor based in Tokyo, Japan, has made significant contributions to the field of semiconductor processing with a remarkable portfolio of 19 patents.

Latest Patents: Among his recent achievements is the development of a groundbreaking method for photo annealing non-single crystalline semiconductor films. This innovation revolutionizes the manufacturing process by introducing a unique semiconductor layer treatment that showcases the Self-Enhanced Luminescence (SEL) effect, departing from the traditional Staebler-Wronski effect.

Career Highlights: Susumu Nagayama is a key figure at Semiconductor Energy Laboratory Co., Ltd., where his expertise and dedication have led to the successful implementation of cutting-edge technologies in semiconductor processing. His commitment to innovation and precision is evident in each of his patented inventions.

Collaborations: Nagayama's collaborative efforts with esteemed colleagues such as Shunpei Yamazaki and Kunio Suzuki have further enriched the research landscape in the semiconductor industry. Together, they have explored new frontiers and pushed the boundaries of technological advancement.

Conclusion: In conclusion, Susumu Nagayama stands as a shining example of ingenuity and perseverance in the realm of semiconductor processing. His trailblazing inventions continue to shape the future of technology, cementing his legacy as a visionary inventor in the global innovation community.

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