The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1989
Filed:
Dec. 17, 1986
Applicant:
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Masayoshi Abe, Tama, JP;
Susumu Nagayama, Tokyo, JP;
Kunio Suzuki, Atsugi, JP;
Takeshi Fukada, Ebina, JP;
Mikio Kinka, Atsugi, JP;
Katsuhiko Shibata, Atsugi, JP;
Masato Susukida, Atsugi, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 30 ; 357-2 ;
Abstract
An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.