The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
Jan. 28, 1987
Kunio Suzuki, Tokyo, JP;
Ippei Kobayashi, Atsugi, JP;
Katsuhiko Shibata, Atsugi, JP;
Masato Susukida, Atsugi, JP;
Mikio Kinka, Atsugi, JP;
Takeshi Fukada, Ebina, JP;
Susumu Nagayama, Tokyo, JP;
Masayoshi Abe, Tokyo, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co. Ltd., Kanagawa, JP;
Abstract
Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.