The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Aug. 24, 1992
Applicant:
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Kunio Suzuki, Tokyo, JP;
Susumu Nagayama, Yokohama, JP;
Takashi Inujima, Atsugi, JP;
Masayoshi Abe, Tama, JP;
Takeshi Fukada, Ebina, JP;
Mikio Kinka, Nonoichimachi, JP;
Ippei Kobayashi, Koube, JP;
Katsuhiko Shibata, Hamamatsu, JP;
Masato Susukida, Chiba, JP;
Kaoru Koyanagi, Saku, JP;
Assignee:
Semiconductor Energy Laboratory Co.., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437174 ; 437 82 ; 437101 ; 437108 ; 437109 ; 437247 ; 437908 ; 437942 ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ; 148D / ;
Abstract
An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.