The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1990
Filed:
Aug. 22, 1986
Applicant:
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Kunio Suzuki, Atsugi, JP;
Mikio Kinka, Atsugi, JP;
Takeshi Fukada, Ebina, JP;
Masayoshi Abe, Tama, JP;
Ippei Kobayashi, Atsugi, JP;
Katsuhiko Shibata, Atsugi, JP;
Masato Susukida, Atsugi, JP;
Susumu Nagayama, Tokyo, JP;
Kaoru Koyanagi, Saku, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 52 ; 357-2 ; 357 54 ;
Abstract
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.