The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 1989
Filed:
Mar. 09, 1989
Applicant:
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Kunio Suzuki, Atsugi, JP;
Susumu Nagayama, Tokyo, JP;
Takashi Inujima, Atsugi, JP;
Masayoshi Abe, Tama, JP;
Takeshi Fukada, Ebina, JP;
Mikio Kinka, Atsugi, JP;
Ippei Kobayashi, Atsugi, JP;
Katsuhiko Shibata, Atsugi, JP;
Masato Susukida, Atsugi, JP;
Kaoru Koyanagi, Saku, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437101 ; 148D / ; 148D / ; 148D / ; 427 39 ; 427 531 ; 427 82 ; 427 85 ; 427174 ; 427247 ; 427942 ;
Abstract
An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.