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For the Inventor, By the Inventor

San Jose, CA, United States of America

Sunny Cherian

This inventor holds 9 USPTO granted patents. Top assignee: Advanced Micro Devices Corporation. Active years: 2002-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunny Cherian. Retrieved from https://idiyas.com/inventor/sunny-cherian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 156(Granted Patents)


Company Filing History:

goldMedal9 out of 13,185 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2002-2005

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9 patents (USPTO):Explore Patents
1. 6975014 - Method for making an ultra thin FDSOI device with improved short-channel performance (2005-12-13),
2. 6821713 - Method for lateral trimming of spacers (2004-11-23),
3. 6605843 - Fully depleted SOI device with tungsten damascene contacts and method of forming same (2003-08-12),
4. 6596598 - T-shaped gate device and method for making (2003-07-22),
5. 6512273 - Method and structure for improving hot carrier immunity for devices with very shallow junctions (2003-01-28),
6. 6495853 - Self-aligned gate semiconductor (2002-12-17),
7. 6448163 - Method for fabricating T-shaped transistor gate (2002-09-10),
8. 6362061 - Method to differentiate source/drain doping by using oxide slivers (2002-03-26),
9. 6358760 - Method for amorphous silicon local interconnect etch (2002-03-19),

Title: Innovations of Sunny Cherian

Introduction

Sunny Cherian is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work focuses on improving device performance and manufacturing techniques in the semiconductor industry.

Latest Patents

Among his latest patents is a method for making an ultra-thin FDSOI device with improved short-channel performance. This innovative method allows for the formation of a FDSOI device with a channel length of less than 50 nm while maintaining good short-channel control. The design incorporates a tapered polysilicon spacer and a dielectric spacer, enhancing the overall performance of the device. Another notable patent is the method for lateral trimming of spacers. This technique provides a controllable way to trim a multi-film stack spacer using a self-limiting etch technique, which can be adjusted through various parameters such as gas flows and pressures.

Career Highlights

Sunny Cherian is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

Throughout his career, Sunny has collaborated with talented individuals such as Zoran Krivokapic and Allison Holbrook. Their combined expertise has contributed to the successful development of innovative technologies.

Conclusion

Sunny Cherian's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative methods continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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