The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jun. 01, 2000
Applicant:
Inventors:
Jiahua Huang, San Jose, CA (US);
Allison Holbrook, San Jose, CA (US);
James H. Chiang, Mountain View, CA (US);
Sunny Cherian, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ; H01L 2/1302 ; G01R 3/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ; H01L 2/1302 ; G01R 3/100 ;
Abstract
A silicon layer is etched using a plasma etcher equipped with an endpoint control device. CF and N are provided to the plasma etcher at lower flow rates than those typically used during fixed time etching processes. The endpoint control device monitors optical emissions from the etching chamber at a particular wavelength to detect a predetermined change in intensity. When the change in intensity is detected, the etching is terminated.