The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2002
Filed:
Aug. 10, 2000
Applicant:
Inventors:
Allison Holbrook, San Jose, CA (US);
Sunny Cherian, San Jose, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/13205 ;
Abstract
A method of forming a T-shaped gate for a transistor, comprising: defining a base length of the gate by forming a gate stack on a substrate; defining a contact length by forming a layer of nitride on the gate stack; and defining gate height by selectively removing portions of the nitride layer. The method may include the further step of defining a contact height by depositing a conductive layer on said gate stack.