The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Apr. 05, 2001
Applicants:
Zoran Krivokapic, Santa Clara, CA (US);
Sunny Cherian, San Jose, CA (US);
Allison Holbrook, San Jose, CA (US);
Inventors:
Zoran Krivokapic, Santa Clara, CA (US);
Sunny Cherian, San Jose, CA (US);
Allison Holbrook, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L029/00 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a FDSOI device with channel length less than 50 nm with good short channel control. The gate has a tapered polysilicon spacer and a dielectric spacer. A polysilicon gate feature is formed and dielectric sidewall spacers are formed thereon. The polysilicon gate feature is then etched to form tapered poly features separated by a gap. A gate dielectric is deposited at low temperature, then metal is deposited into the gap to form the metal gate.