The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2002
Filed:
Aug. 10, 2000
Applicant:
Inventors:
Allison Holbrook, San Jose, CA (US);
Jiahua Huang, San Jose, CA (US);
Sunny Cherian, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
A method of manufacturing a semiconductor device is provided in which a tunnel dielectric layer and a gate layer are formed on a semiconductor wafer and a trench forming technique is used to define a floating gate structure. An insulator is deposited in the trench whereby the gate layer and the tunnel dielectric layer form a gate which is self-aligned to a tunnel dielectric.