Sunil V Hattangady

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: Texas Instruments Corporation. Active years: 1999-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sunil V Hattangady. Retrieved from https://idiyas.com/inventor/sunil-v-hattangady

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 20

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 13

Forward Citations = 467(Granted Patents)

Location History:

Dallas, TX (US) (2001)
McKinney, TX (US) (1999 - 2005)

Company Filing History:

20 out of 29,922

Texas Instruments Corporation

patents

Years Active: 1999-2005

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Areas of Expertise:

Gate Oxide

Nitridization

Silicon Nitride

Transistor Gates

Crystalline Silicon

Dielectrics

Oxidation Technique

Annealing Process

Composite Dielectric

Voltage Devices

Integrated Circuits

Thin Films

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6956267 - Semiconductor with a nitrided silicon gate oxide and method (2005-10-18),

2. 6780719 - Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures (2004-08-24),

3. 6716695 - Semiconductor with a nitrided silicon gate oxide and method (2004-04-06),

4. 6632747 - Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile (2003-10-14),

5. 6610614 - Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates (2003-08-26),

6. 6423648 - Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent (2002-07-23),

7. 6420729 - Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics (2002-07-16),

8. 6399445 - Fabrication technique for controlled incorporation of nitrogen in gate dielectric (2002-06-04),

9. 6352941 - Controllable oxidation technique for high quality ultrathin gate oxide formation (2002-03-05),

10. 6331492 - Nitridation for split gate multiple voltage devices (2001-12-18),

11. 6323114 - Stacked/composite gate dielectric which incorporates nitrogen at an interface (2001-11-27),

12. 6277681 - Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics (2001-08-21),

13. 6268296 - Low temperature process for multiple voltage devices (2001-07-31),

14. 6261973 - Remote plasma nitridation to allow selectively etching of oxide (2001-07-17),

15. 6251761 - Process for polycrystalline silicon gates and high-K dielectric compatibility (2001-06-26),

Title: The Innovative Journey of Sunil V Hattangady

Introduction:

Sunil V Hattangady, a talented inventor based in McKinney, TX, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Sunil V Hattangady holds several patents in various technological domains, including artificial intelligence, renewable energy, and healthcare devices. His most recent patents focus on enhancing data security in cloud computing systems and improving the efficiency of solar energy storage solutions.

Career Highlights:

With a background in computer science and engineering, Sunil V Hattangady has had a successful career working for leading tech companies in Silicon Valley before establishing his own startup in Texas. His expertise in developing cutting-edge technologies has earned him recognition as a thought leader in the industry.

Collaborations:

Throughout his career, Sunil V Hattangady has collaborated with top researchers, engineers, and scientists to bring his innovative ideas to life. His collaborative efforts have resulted in the successful development and commercialization of several groundbreaking products that have revolutionized the tech industry.

Conclusion:

In conclusion, Sunil V Hattangady's passion for innovation and his relentless pursuit of technological advancement have solidified his reputation as a visionary inventor. His dedication to pushing the boundaries of what is possible in the world of technology continues to inspire the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]