The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Nov. 22, 1999
Sunil V. Hattangady, Dallas, TX (US);
Tad (Douglas) Grider, McKinney, TX (US);
John W. Kuehne, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate which includes a dielectric layer formed between a first structure and a second structure, the method comprising the steps of: growing an oxide-containing layer (layer,of FIGS.,) on the first structure (substrate,of FIGS.,); forming a silicon-containing layer (layer,of FIG.,) on the oxide-containing layer; oxidizing substantially all of the silicon-containing layer by subjecting it to an ambient comprised of oxygen and nitrogen with a substrate temperature around 700 to 800 C.; and forming the second structure (layer,of FIG.,) on the oxidized silicon-containing layer. Preferably, the step of oxidizing substantially all of the silicon-containing layer is performed by subjecting the silicon-containing layer to an ambient containing: N,O with a wafer temperature around 700 to 800 C.; or NO with a wafer temperature around 700 to 800 C. The nitrogen is, preferably, incorporated between the oxide-containing layer and the first structure and/or between the oxide-containing layer and the oxidized silicon-containing layer.