The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Jun. 20, 2001
Applicant:
Inventors:
Hiroaki Niimi, Richardson, TX (US);
Douglas T. Grider, McKinney, TX (US);
Rajesh Khamankar, Coppell, TX (US);
Sunil Hattangady, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Quick Actions:
Niimi, Hiroaki. (2003). Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile (U.S. Patent No. 6632747). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6632747
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile