The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2001
Filed:
Dec. 18, 1998
George R. Misium, Plano, TX (US);
Sunil V. Hattangady, McKinney, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method is disclosed for making gate oxides on a silicon wafer surface for multiple voltage applications comprising the steps of growing an oxide layer (,) on a wafer (,) surface. Next, a photoresist layer (,) is deposited over a portion of the oxide layer (,) and the isolation (,). The entire wafer (,) is exposed to a nitrogen ion containing plasma to form a nitrided layer (,). The photoresist (,) is removed, and the exposed portion of the oxide layer (,) is etched to the wafer (,) surface. Finally, an oxidation step forms a silicon dioxide layer (,) having a different thickness than the silicon dioxide layer (,).