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For the Inventor, By the Inventor

Gwacheon-si, South Korea

Sung-Lae Cho

USPTO Granted Patents = 14 

Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 123(Granted Patents)


Location History:

  • Seoul, KR (2004)
  • Gwacheon-si, KR (2009 - 2017)

Company Filing History:

goldMedal14 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2004-2017

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14 patents (USPTO):Explore Patents
1. 9543513 - Variable resistance material layers and variable resistance memory devices including the same (2017-01-10),
2. 9318700 - Method of manufacturing a phase change memory device (2016-04-19),
3. 8993441 - Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same (2015-03-31),
4. 8790976 - Method of forming semiconductor device having self-aligned plug (2014-07-29),
5. 8644062 - Multi-level memory device using resistance material (2014-02-04),
6. 8625325 - Memory cells including resistance variable material patterns of different compositions (2014-01-07),
7. 8580606 - Method of forming resistance variable memory device (2013-11-12),
8. 8507353 - Method of forming semiconductor device having self-aligned plug (2013-08-13),
9. 8502184 - Nonvolatile memory device using variable resistive element (2013-08-06),
10. 8187914 - Methods of forming a phase change memory device (2012-05-29),
11. 7642622 - Phase changeable memory cells and methods of forming the same (2010-01-05),
12. 7485559 - Semiconductor device and method of fabricating the same (2009-02-03),
13. 7473597 - Method of forming via structures and method of fabricating phase change memory devices incorporating such via structures (2009-01-06),
14. 6707724 - Apparatus for providing reference voltages to memory modules in a memory system (2004-03-16),

Title: **Sung-Lae Cho: Innovator in Variable Resistance Materials**

Introduction

Sung-Lae Cho, based in Gwacheon-si, South Korea, is a distinguished inventor known for his significant contributions to the field of variable resistance materials and memory devices. With a portfolio of 14 patents, Cho has played a pivotal role in advancing the technology that underpins modern memory devices, particularly in the realm of phase change memory technology.

Latest Patents

Among his notable inventions, Cho’s latest patents include a groundbreaking variable resistance material layer composed of germanium (Ge), antimony (Sb), tellurium (Te), and various impurities represented by the chemical formula X(GeSbTe). This innovative material achieves a specific atomic concentration range which is crucial for optimizing memory device performance. Another key patent outlines a method of manufacturing phase change memory devices, involving a sophisticated process where insulating interlayers and conformal phase change material patterns are strategically layered to enhance memory functionality.

Career Highlights

Sung-Lae Cho is currently employed by Samsung Electronics Co., Ltd., a leading global technology company renowned for its innovative strides in electronics and semiconductor devices. His role at Samsung underscores his commitment to pushing the boundaries of memory technology, contributing to advancements that have substantial implications in data storage and retrieval.

Collaborations

Throughout his career, Cho has collaborated with fellow inventors Dong-Hyun Im and Ik-Soo Kim, whose combined expertise has fostered a collaborative environment yielding significant technological breakthroughs. These partnerships are instrumental in refining and executing patent strategies that enhance their collective impact in the field.

Conclusion

Sung-Lae Cho’s work exemplifies the spirit of innovation at the intersection of materials science and electrical engineering. His patents not only showcase his inventive skill but also reflect a forward-thinking approach essential for the evolution of memory technologies in a rapidly advancing digital age. As he continues to contribute to the field, Cho remains a vital figure in the landscape of semiconductor innovation.

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