The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Nov. 29, 2005
Ji-hye Yi, Yongin-si, KR;
Byeong-ok Cho, Seoul, KR;
Sung-lae Cho, Gwacheon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A phase changeable memory cell is provided. The phase changeable memory cell includes a lower interlayer dielectric layer formed on a semiconductor substrate and a lower conductive plug passing through the lower interlayer dielectric layer. The lower conductive plug is in contact with a phase change material pattern disposed on the lower interlayer dielectric layer. The phase change material pattern and the lower interlayer dielectric layer are covered with an upper interlayer dielectric layer. The phase change material pattern is in direct contact with a conductive layer pattern, which is disposed in a plate line contact hole passing through the upper interlayer dielectric layer. Methods of fabricating the phase changeable memory cell is also provided.