The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Dec. 10, 2015
Applicants:

Do-hyung Kim, Seongnam-si, KR;

Jong-uk Kim, Yongin-si, KR;

Dong-ho Ahn, Hwaseong-si, KR;

Sung-lae Cho, Gwacheon-si, KR;

Inventors:

Do-Hyung Kim, Seongnam-si, KR;

Jong-Uk Kim, Yongin-si, KR;

Dong-Ho Ahn, Hwaseong-si, KR;

Sung-Lae Cho, Gwacheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 27/2418 (2013.01);
Abstract

A variable resistance material layer including germanium (Ge), antimony (Sb), tellurium (Te), and at least one type of impurities X. The variable resistance material layer having a composition represented by a chemical formula of X(GeSbTe), wherein an atomic concentration of the impurities X is in a range of 0<p≦0.2, an atomic concentration of Ge is in a range of 0.05≦a<0.19, and an atomic concentration of Te is in a range of 0.42≦b≦0.56.


Find Patent Forward Citations

Kim, Do-Hyung. (2017). Variable resistance material layers and variable resistance memory devices including the same (U.S. Patent No. 9543513). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9543513

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…