The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 12, 2013

Filed:

Sep. 23, 2011
Applicants:

Jeong-hee Park, Hwaseong-si, KR;

Jung-hwan Park, Seoul, KR;

Hideki Horii, Seoul, KR;

Sung-lae Cho, Gwacheon-si, KR;

Inventors:

Jeong-Hee Park, Hwaseong-si, KR;

Jung-Hwan Park, Seoul, KR;

Hideki Horii, Seoul, KR;

Sung-Lae Cho, Gwacheon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film.


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