Jung-hwan Park

Title: Innovations of Jung-hwan Park

Introduction

Jung-hwan Park is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of memory devices, holding a total of 12 patents. His work focuses on advancing technology in variable resistance memory devices, which are crucial for modern computing.

Latest Patents

Among his latest patents is a variable resistance memory device. This device features a metal interconnection layer on a substrate, an interlayer insulating layer that defines a contact hole, and a barrier metal layer with multiple sub-barrier metal layers. Additionally, it includes a plug metal layer that buries the contact hole and a variable resistance structure on both the barrier and plug metal layers. Another notable patent is a method of manufacturing a variable resistance memory device. This method involves forming an MTJ structure layer on a substrate, etching it to create an MTJ structure, and transferring the substrate to a deposition chamber while maintaining a high vacuum state.

Career Highlights

Jung-hwan Park has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and Samsung SDI Co., Inc. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Throughout his career, Jung-hwan Park has collaborated with notable colleagues such as Jeong-Hee Park and Jong-Hyuk Lee. These partnerships have contributed to the advancement of his research and the successful development of his inventions.

Conclusion

Jung-hwan Park's contributions to the field of memory devices highlight his innovative spirit and dedication to technology. His patents and collaborations reflect his significant impact on the industry.