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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10672978 B1

PDFFull Text
Date of Patent:
Jun. 02, 2020

Filed:

Sep. 05, 2018

Method of manufacturing a variable resistance memory device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung-Min Lee, Gwangmyeong-si, KR;

Ju-Hyun Kim, Yongin-si, KR;

Jung-Hwan Park, Seoul, KR;

Se-Chung Oh, Yongin-si, KR;

Dong-Kyu Lee, Suwon-si, KR;

Kyung-Il Hong, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:

Lee IP Law, PC

Primary Examiner:

Bradley Smith

Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01); H01L 43/02 (2006.01); H01L 27/24 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 27/228 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1675 (2013.01); H01L 29/66795 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01);
Abstract

In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10Torr.

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