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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10686122 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

May. 18, 2018

Variable resistance memory device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung-hwan Park, Seoul, KR;

Ju-hyun Kim, Yongin-si, KR;

Se-chung Oh, Yongin-si, KR;

Dong-kyu Lee, Suwon-si, KR;

Jung-min Lee, Gwangmyeong-si, KR;

Kyung-il Hong, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 23/532 (2006.01); H01L 27/22 (2006.01); H01L 23/538 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/1675 (2013.01); H01L 23/5386 (2013.01); H01L 23/53228 (2013.01); H01L 27/222 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 43/12 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1675 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 13/0004 (2013.01);
Abstract

A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

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