The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Jul. 09, 2012
Applicants:

Jeong-hee Park, Hwaseong-si, KR;

Soon-oh Park, Suwon-si, KR;

Jung-hwan Park, Seoul, KR;

Jin-ho OH, Gyeonggi-do, KR;

Inventors:

Jeong-Hee Park, Hwaseong-si, KR;

Soon-Oh Park, Suwon-si, KR;

Jung-Hwan Park, Seoul, KR;

Jin-Ho Oh, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/06 (2013.01); H01L 45/1683 (2013.01); H01L 45/141 (2013.01);
Abstract

A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.


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