Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Jung-hwan Park

Jeong-Hee Park

Jong-Hyuk Lee

Hideki Horii

Soon-Oh Park

Dong-Sik Zang

Yoon-hyung Cho

Se-Chung Oh

Jong-Uk Kim

Sung-Lae Cho

Ju-hyun Kim

Hae-Seung Lee

Jung-Moo Lee

Dong-kyu Lee

Sug-woo Jung

Kyung-il Hong

Jung-min Lee

Dong-Ho Ahn

Ki-Seok Lee

Zhe Wu

Hyo-Jung Kim

Kyu-Hyun Lee

Man-Sug Kang

Jin-Ho Oh

Hyo-Jin Park

Jun-Ku Ahn

Hae-Sung Lee

A variable resistance memory device includes a metal interconnection layer on a substrate, an interlayer insulating layer on the metal interconnection layer and defining a contact hole for exposing a portion of the metal interconnection layer, a barrier metal layer including a plurality of sub-barrier metal layers inside the contact hole, a plug metal layer on the barrier metal layer and burying the contact hole, and a variable resistance structure on the barrier metal layer and the plug metal layer.

Variable resistance memory device

In a method of manufacturing a variable resistance memory device, an MTJ structure layer is formed on a substrate. The MTJ structure layer is etched in an etching chamber to form an MTJ structure. The substrate having the MTJ structure thereon is transferred to a deposition chamber through a transfer chamber. A protection layer covering a sidewall of the MTJ structure is formed in the deposition chamber. The etching chamber, the transfer chamber, and the deposition chamber are kept in a high vacuum state equal to or more than about 10Torr.

Method of manufacturing a variable resistance memory device

A method of manufacturing a magnetoresistive random access memory device, the method including forming a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked; forming a first capping layer to cover a surface of the memory structure by a deposition process using a plasma under first conditions; and forming a second capping layer on the first capping layer by a deposition process using a plasma under second conditions different from the first conditions.

Magnetoresistive random access memory device

Magnetoresistive random access memory device and method of manufacturing the same

A semiconductor memory device and a manufacturing method of the semiconductor memory device are provided. The semiconductor memory device can include a substrate in which a cell area and a peripheral area are defined, a first gate insulating layer on the peripheral area, and a poly gate layer on the first gate insulating layer to form a combined stack, wherein the combined stack of the first gate insulating layer and the first poly gate layer is absent from the cell area.

Semiconductor memory devices and manufacturing methods thereof

In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns.

Method of manufacturing a phase change memory device

A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.

Method of forming a phase change material layer pattern and method of manufacturing a phase change memory device

An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern.

Method of manufacturing variable resistance memory device

A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film.

Method of forming resistance variable memory device

A filter layer for a display and a method of preparing the filter layer, and a display including the filter layer, are provided. The filter layer for a display includes oxide particles and nano-sized metal particulates adhered to the surface of the oxide particles. A surface plasma resonance (SPR) phenomenon is triggered at the interface of the oxide/metal to selectively absorb light of at least one predetermined wavelength.

Filter layer for a display, a method of preparing a filter layer for a display and a display including a filter layer

A CRT has an improved contrast with a provision of a filter layer where nano-sized metal particles are dispersed in a dielectric matrix to selectively absorb light in predetermined wavelengths, specifically wavelengths between peak wavelengths of primary colors emitted by phosphors coated on the inner surface of the face plate. The improved contrast is a result of the metal particles in a dielectric matrix resonating with particular wavelengths and thus absorbing them.

Cathode ray tube

A CRT has an improved contrast with the provision of a filter layer where nano-sized metal particles and colored particles are dispersed in a dielectric matrix to selectively absorb light in predetermined wavelengths, specifically wavelengths between peak wavelengths of primary colors emitted by phosphors coated on the inner surface of the faceplate. The improved contrast is a result of the metal particles in a dielectric matrix resonating with particular wavelengths and thus absorbing them.

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Seoul, South Korea

Jung-hwan Park