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For the Inventor, By the Inventor

Portland, OR, United States of America

Sudipto Naskar

USPTO Granted Patents = 15 

Average Co-Inventor Count = 5.3

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:

goldMedal15 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2020-2025

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15 patents (USPTO):Explore Patents
1. 12369399 - Gate-to-gate isolation for stacked transistor architecture via selective dielectric deposition structure (2025-07-22),
2. 12342551 - Capacitor architectures in semiconductor devices (2025-06-24),
3. 12249577 - Cap structure for interconnect dielectrics and methods of fabrication (2025-03-11),
4. 12176408 - Localized spacer for nanowire transistors and methods of fabrication (2024-12-24),
5. 12087614 - Gap fill dielectrics for electrical isolation of transistor structures in the manufacture of integrated circuits (2024-09-10),
6. 11901404 - Capacitor architectures in semiconductor devices (2024-02-13),
7. 11894368 - Gate-all-around integrated circuit structures fabricated using alternate etch selective material (2024-02-06),
8. 11894270 - Grating replication using helmets and topographically-selective deposition (2024-02-06),
9. 11791375 - Capacitor architectures in semiconductor devices (2023-10-17),
10. 11335598 - Grating replication using helmets and topographically-selective deposition (2022-05-17),
11. 11264449 - Capacitor architectures in semiconductor devices (2022-03-01),
12. 11239112 - Passivating silicide-based approaches for conductive via fabrication and structures resulting therefrom (2022-02-01),
13. 11152254 - Pitch quartered three-dimensional air gaps (2021-10-19),
14. 10643946 - Nitrogen assisted oxide gapfill (2020-05-05),
15. 10546772 - Self-aligned via below subtractively patterned interconnect (2020-01-28),

Title: Sudipto Naskar: Pioneering Innovations in Integrated Circuit Structures

Introduction

Sudipto Naskar, an innovative inventor based in Portland, OR, has made significant contributions to the field of integrated circuit design. With a remarkable portfolio of 13 patents, he is recognized for his cutting-edge inventions that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Among Sudipto's latest patents is the invention titled "Cap structure for interconnect dielectrics and methods of fabrication." This patent introduces an integrated circuit structure comprising a first interconnect level with a dielectric material positioned between interconnect structures, and a second interconnect level above it featuring a cap structure. This cap structure incorporates additional dielectric layers that improve the overall integrity and performance of the circuit.

Another significant patent is "Localized spacer for nanowire transistors and methods of fabrication." This invention outlines a novel transistor design that includes multiple channel layers and epitaxial source and drain structures. The unique gate structure combined with the spatial organization of materials enhances the transistors' performance, making them suitable for advanced applications in microelectronics.

Career Highlights

Sudipto Naskar currently works at Intel Corporation, a leader in semiconductor manufacturing and innovation. Over the years, he has developed numerous patented technologies that contribute to Intel's advancements in the industry. His inventions not only reflect his expertise but also signify the company's commitment to pushing technological boundaries.

Collaborations

Throughout his career, Sudipto has had the opportunity to collaborate with talented coworkers, including Manish Chandhok and Kevin Lai Lin. Their combined efforts and expertise work towards developing innovative solutions that advance the semiconductor field and position Intel at the forefront of technology.

Conclusion

Sudipto Naskar continues to be a driving force in the realm of integrated circuits, showcasing the importance of innovation in technology. With his impressive track record of patents and collaborations with fellow experts, he is well-positioned to further impact the semiconductor industry in the years to come.

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