Santa Clara, CA, United States of America

Stefan Hunsche

This inventor holds 47 USPTO granted patents and 7 published patent applications and 2 EPO patents, primarily in Lithographic Metrology. Top assignees: Asml Netherlands B.v., Brion Technologies, Inc., Lucent Technologies Inc.. Active years: 2004-2025.

USPTO Granted Patents = 47 

% Patents Active = 91.5

 

Average Co-Inventor Count = 3.4

ph-index = 9

Forward Citations = 515(Granted Patents)


Location History:

  • Jersey City, NJ (US) (2004 - 2014)
  • Sunnyvale, CA (US) (2005 - 2014)
  • Santa Clara, CA (US) (2017 - 2023)

Company Filing History:


Years Active: 2004-2025

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Areas of Expertise:
Lithographic Metrology
Defect Identification
Process Window Optimization
Machine Learning
Pattern Fidelity Control
Image Analysis
Measurement Locations
Overlay Improvement
Inspection Apparatus
Substrate Image Prediction
Optical Proximity Correction
Metrology Data Correction
47 patents (USPTO):Explore Patents

Title: **Stefan Hunsche: Innovator in Machine Learning and Metrology Technologies**

Introduction

Stefan Hunsche, based in Santa Clara, CA, is a notable inventor with an impressive portfolio of 45 patents. His work primarily focuses on advancements in machine learning and metrology technologies that have contributed significantly to the field of semiconductor manufacturing.

Latest Patents

Hunsche's recent contributions to technology include two significant patents:

1. **Method and apparatus for predicting substrate image** - This patent outlines a method for training a machine learning model designed to predict the substrate image corresponding to a printed pattern as measured via a metrology tool. The method involves obtaining a comprehensive training dataset, which includes metrology data and representations of mask patterns. The training process aims to refine the accuracy of the model by improving a cost function that incorporates the relationship between the predicted image and metrology data.

2. **Selection of measurement locations for patterning processes** - This patent describes a systematic approach for selecting measurement locations during a patterning process. It involves obtaining pattern data and process characteristics, followed by determining a simulated result of the patterning process. The measurement location is then selected based on this simulated outcome, enhancing the precision and efficiency of substrate processing.

Career Highlights

Throughout his career, Hunsche has worked with esteemed companies, including ASML Netherlands B.V. and Brion Technologies, Inc. His roles in these organizations have allowed him to refine his skills and develop innovative solutions in the realm of semiconductor technologies.

Collaborations

Hunsche has collaborated with distinguished professionals such as Jun Ye and Markus Gerardus Martinus Maria Van Kraaij. These collaborations have further enriched his innovative contributions and have been instrumental in pushing the boundaries of technology in the semiconductor field.

Conclusion

Stefan Hunsche's inventive spirit and dedication to advancing technology are encapsulated in his myriad patents. His innovations, particularly in machine learning and metrology, continue to pave the way for exciting developments in semiconductor manufacturing, showcasing his vital role in shaping the industry.

Profile summary based on public USPTO records.
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