Dresden, Germany

Srivatsa Kundalgurki

This inventor holds 8 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2006-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Srivatsa Kundalgurki. Retrieved from https://idiyas.com/inventor/srivatsa-kundalgurki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.1

ph-index = 3

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 2006-2009

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8 patents (USPTO):Explore Patents

Title: Innovations of Srivatsa Kundalgurki

Introduction

Srivatsa Kundalgurki is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on innovative methods that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Latest Patents

One of his latest patents is a method for cleaning a semiconductor wafer. This invention involves forming bottom electrodes of stacked capacitor DRAM cells by depositing a metal layer on the side walls of trenches within a hard mask layer. The hard mask layer serves as a mold for the bottom electrode elements. Prior to this, a sacrificial first metal layer is disposed, resulting in an electrically conductive surface on the semiconductor wafer. The mask layer is then wet-etched to release the bottom electrode as free-standing elements on the semiconductor surface. During a wafer drying process, the bottom electrodes are polarized in a cleaning liquid bath, utilizing the conductive path provided by the first and second metal layers. This innovative approach generates a repulsive electric field that overcomes the attractive forces between neighboring bottom electrode elements, which are induced by the capillary effects of the liquids used for etching and cleaning.

Another significant patent by Kundalgurki is a method and apparatus for characterizing a recess located on a surface of a substrate. This invention provides a method for characterizing a recess by positioning a measurement tip directly above it. An electrically conductive path is established between the measurement tip and the bottom of the recess by ionizing a medium located within the recess. A voltage is then applied to measure the current flowing between the measurement tip and the substrate, allowing for characterization based on the magnitude of the measured current.

Career Highlights

Srivatsa Kundalgurki is currently employed at Infineon Technologies AG, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing technologies that are critical to modern electronics.

Collaborations

He has collaborated with notable colleagues such as Dietmar Temmler and Hans-Peter Moll, contributing to a dynamic and innovative work environment.

Conclusion

Srivatsa Kundalgurki's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a leading inventor in the field. His innovative methods continue to shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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