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For the Inventor, By the Inventor

Taichung, Taiwan

Shyh-Chyi Wong

USPTO Granted Patents = 49

Average Co-Inventor Count = 2.5

ph-index = 15

Forward Citations = 665(Granted Patents)


Location History:

  • Taichang, TW (1996 - 2003)
  • HsinChu, TW (1999 - 2005)
  • Taichung, TW (1995 - 2006)

Company Filing History:

goldMedal31 out of 40,674 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal15 out of 2,029 
 
Winbond Electronics Corporation
 patents
bronzeMedal2 out of 105 
 
Windbond Electronics Corp.
 patents
4. 1 out of 1 
 
Windbond Eelctronics Corp.
 patent

Years Active: 1995-2006

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Areas of Expertise:
Mixed-Mode Resistor Performance
RF Seal Ring Structure
Integrated Circuit Modeling
Stacked Gate RF MOSFET
Electrostatic Discharge Protection
Multi-Level Memory Cell
CMOS Device Structures
High-Gain PNP Bipolar Transistor
Charge-Pumping Circuits
Dynamic Threshold MOSFET
Buried Shallow Trench Isolation
Capacitor Coupled MOSFET
49 patents (USPTO):Explore Patents
1. 7061056 - [object Object] (2006-06-13),
2. 7030728 - Layout and method to improve mixed-mode resistor performance (2006-04-18),
3. 6943063 - RF seal ring structure (2005-09-13),
4. 6845347 - Method for modeling an integrated circuit including a DRAM cell (2005-01-18),
5. 6737310 - Self-aligned process for a stacked gate RF MOSFET device (2004-05-18),
6. 6732422 - Method of forming resistors (2004-05-11),
7. 6636139 - Structure to reduce the degradation of the Q value of an inductor caused by via resistance (2003-10-21),
8. 6613623 - High fMAX deep submicron MOSFET (2003-09-02),
9. 6559493 - High density stacked mim capacitor structure (2003-05-06),
10. 6501137 - Electrostatic discharge protection circuit triggered by PNP bipolar action (2002-12-31),
11. 6480414 - Multi-level memory cell (2002-11-12),
12. 6476451 - Buried guard rings for CMOS device (2002-11-05),
13. 6469362 - High-gain pnp bipolar junction transistor in a CMOS device and method for forming the same (2002-10-22),
14. 6465294 - Self-aligned process for a stacked gate RF MOSFET device (2002-10-15),
15. 6459613 - Current-mode identifying circuit for multilevel flash memories (2002-10-01),

Title: Innovations and Contributions of Shyh-Chyi Wong

Introduction

Shyh-Chyi Wong, based in Taichung, Taiwan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 49 patents, his work focuses on advancements in MOSFET technology and resistor performance, reflecting his expertise in innovation and invention within the electronics industry.

Latest Patents

Wong's latest patents include a novel method for forming high fdeep submicron MOSFETs. This intricate process involves providing a substrate with an existing MOSFET, forming a first ILD layer, and then planarizing it to expose the silicide portion over the gate electrode. A metal gate portion is integrated over the planarized layer, which significantly enhances the device's characteristics. Additionally, he has developed a layout and method to improve mixed-mode resistor performance, which enhances resistor stability and voltage coefficient of resistance. This involves creating a main resistor element comprised of various resistor elements with low resistance contacts enabled by the silicidation process.

Career Highlights

Throughout his career, Shyh-Chyi Wong has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Limited and Winbond Electronics Corporation. His experience at these organizations enabled him to refine his skills and innovate groundbreaking technologies that have now become crucial in modern electronics.

Collaborations

Wong has also collaborated with esteemed colleagues such as Mong-Song Liang and Ching-Hsiang Hsu. Their joint efforts have further strengthened the field of semiconductor research and development, contributing to advancements that benefit the entire industry.

Conclusion

Shyh-Chyi Wong's dedication to innovation and his substantial number of patents reflect his expertise and influence in semiconductor technology. His innovative approaches to MOSFET formation and resistor performance have made a lasting impact, and his collaborative work continues to push the boundaries of what is possible in the electronics sector.

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