The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2005
Filed:
Jul. 21, 2000
Shih Hsien Yang, Hsinchu, TW;
Shyh-chyi Wong, Hsinchu, TW;
Shih Hsien Yang, Hsinchu, TW;
Shyh-Chyi Wong, Hsinchu, TW;
Winbond Electronics Corporation, Hsinchu, TW;
Abstract
Method and apparatus determine the performance of an integrated circuit that includes at least one of a plurality of deep-well trench dynamic random-access memory (DRAM) cells. The method includes executing a circuit simulator for designing an integrated circuit that contains at least one of a plurality of DRAM cells. Further, the method includes calculating a set of output parameters with the circuit simulator for each of the plurality of DRAM cells utilizing, for example, a deep-well trench DRAM cell model for each of the plurality of DRAM cells.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile