The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2002

Filed:

Feb. 15, 2000
Applicant:
Inventors:

Shyh-Chyi Wong, Hsinchu, TW;

Wen-Ying Wen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract

An integrated circuit device includes a semiconductor substrate, an NMOS, a PMOS contiguous with the NMOS, and a composite pnp bipolar junction transistor contiguous with the NMOS. The composite pnp bipolar junction transistor includes a lateral npn bipolar junction transistor having a first current gain, and a lateral pnp bipolar junction transistor having a second current gain, wherein the current gain of the composite pnp bipolar junction transistor equals the first current gain multiplied by the second current gain.


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