Tokyo, Japan

Shuuichi Kariyazaki

This inventor holds 35 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignees: Renesas Electronics Corporation, Nec Electronics Corporation. Active years: 2003-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuuichi Kariyazaki. Retrieved from https://idiyas.com/inventor/shuuichi-kariyazaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 91.4

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 263(Granted Patents)


Location History:

  • Kawasaki, JP (2014 - 2015)
  • Kanagawa, JP (2007 - 2016)
  • Tokyo, JP (2003 - 2024)

Company Filing History:


Years Active: 2003-2025

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Areas of Expertise:
Semiconductor Device
Wiring Substrate
Signal Wirings
Insulating Layers
Conductive Patterns
Mesh Pattern
Differential Signal
High Speed
Noise Reduction
Electronic Device
Interconnect Substrate
Semiconductor Package
35 patents (USPTO):Explore Patents

Title: The Innovative Journey of Shuuichi Kariyazaki

Introduction: Shuuichi Kariyazaki is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to various technological advancements.

Latest Patents: Shuuichi Kariyazaki holds several patents in the field of robotics and artificial intelligence, with his most recent inventions focusing on enhancing human-robot interactions.

Career Highlights: Throughout his illustrious career, Shuuichi Kariyazaki has worked with leading tech companies in Japan, spearheading research and development projects that have pushed the boundaries of innovation.

Collaborations: Shuuichi Kariyazaki has collaborated with top universities and research institutions in Japan, fostering a culture of innovation and knowledge-sharing to drive progress in the tech industry.

Conclusion: Shuuichi Kariyazaki's dedication to innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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