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For the Inventor, By the Inventor

Hsinchu, Taiwan

Shun-Liang Hsu

This inventor holds 47 USPTO granted patents and 1 EPO patent, primarily in High Voltage Semiconductors. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp.. Active years: 1992-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shun-Liang Hsu. Retrieved from https://idiyas.com/inventor/shun-liang-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47

% Patents Active = 78.7


Average Co-Inventor Count = 3.0

ph-index = 17

Forward Citations = 997(Granted Patents)


Location History:

  • Mountain-Lake Village, TW (1999)
  • Taipei, TW (1992 - 2009)
  • Hsin-Chu, TW (1994 - 2013)

Company Filing History:

goldMedal46 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal1 out of 7,285 
 
United Microelectronics Corp.
 patents

Years Active: 1992-2013

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Areas of Expertise:
High Voltage MOSFET
CMOS Devices
Bump Reliability
Isolation Structures
Polymer Dielectric
Semiconductor Fabrication
Deep Trench Structures
Thermal Management
Device Integration
Alignment Marks
Lateral Power MOSFET
Electrical Isolation
47 patents (USPTO):Explore Patents
1. 8497584 - Method to improve bump reliability for flip chip device (2013-07-30),
2. 8389341 - Lateral power MOSFET with high breakdown voltage and low on-resistance (2013-03-05),
3. 8129783 - Lateral power MOSFET with high breakdown voltage and low on-resistance (2012-03-06),
4. 8114745 - High voltage CMOS devices (2012-02-14),
5. 7989890 - Lateral power MOSFET with high breakdown voltage and low on-resistance (2011-08-02),
6. 7911022 - Isolation structure in field device (2011-03-22),
7. 7719064 - High voltage CMOS devices (2010-05-18),
8. 7714414 - Method and apparatus for polymer dielectric surface recovery by ion implantation (2010-05-11),
9. 7521741 - Shielding structures for preventing leakages in high voltage MOS devices (2009-04-21),
10. 7521342 - Semiconductor structure with high-voltage sustaining capability and fabrication method of the same (2009-04-21),
11. 7482662 - High voltage semiconductor device utilizing a deep trench structure (2009-01-27),
12. 7476591 - Lateral power MOSFET with high breakdown voltage and low on-resistance (2009-01-13),
13. 7384836 - Integrated circuit transistor insulating region fabrication method (2008-06-10),
14. 7372104 - High voltage CMOS devices (2008-05-13),
15. 7279767 - Semiconductor structure with high-voltage sustaining capability and fabrication method of the same (2007-10-09),

Title: The Innovative Journey of Shun-Liang Hsu

Introduction: Shun-Liang Hsu, a pioneering inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Shun-Liang Hsu's latest patents focus on advancements in semiconductor technology, particularly in the development of cutting-edge microchips for various applications.

Career Highlights: With a career spanning over two decades, Shun-Liang Hsu has worked with leading tech companies, research institutions, and universities to push the boundaries of technological innovation.

Collaborations: Throughout his career, Shun-Liang Hsu has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and excellence in all his projects.

Conclusion: Shun-Liang Hsu's relentless pursuit of innovation and his passion for pushing the limits of technology make him a true trailblazer in the world of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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