Yokohama, Japan

Shuichi Toriyama

This inventor holds 11 USPTO granted patents. Top assignees: Kabushiki Kaisha Toshiba, Toshiba Memory Corporation. Active years: 2010-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuichi Toriyama. Retrieved from https://idiyas.com/inventor/shuichi-toriyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 72.7

Average Co-Inventor Count = 2.1

ph-index = 4

Forward Citations = 45(Granted Patents)


Location History:

  • Kanagawa, JP (2010 - 2014)
  • Yokohama, JP (2014 - 2020)

Company Filing History:


Years Active: 2010-2020

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11 patents (USPTO):Explore Patents

Title: The Innovations of Shuichi Toriyama

Introduction

Shuichi Toriyama is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work has been instrumental in advancing memory device technologies.

Latest Patents

One of Toriyama's latest patents is a semiconductor memory device. This device includes a first interconnect layer, a first insulating layer, a second interconnect layer, and a memory pillar. The memory pillar consists of a second insulating layer, a charge storage layer, and a third insulating layer stacked on a part of its side surface and bottom surface. Additionally, a first silicide layer is in contact with the first interconnect layer, followed by a semiconductor layer and a second silicide layer stacked in order along a first direction. The design ensures that the height position of the bottom surface of the first silicide layer is lower than the top surface of the first interconnect layer, while the top surface of the first silicide layer is higher than the bottom surface of the second interconnect layer.

Another notable patent is for a resistive memory with varying dopant concentration in the select transistor channel. This nonvolatile semiconductor memory device features a first wiring extending in a first direction and a second wiring extending in a second direction, intersecting with the first. A memory cell is located at the intersection, which includes a variable resistive element and a select transistor. The semiconductor layer in the select transistor has a first impurity concentration at one end, which decreases to a second impurity concentration as it approaches the other end.

Career Highlights

Throughout his career, Shuichi Toriyama has worked with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Memory Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Toriyama has collaborated with several talented individuals in his field, including Kenichi Murooka and Tomoya Kawai. These collaborations have contributed to the success of his projects and patents.

Conclusion

Shuichi Toriyama's contributions to semiconductor technology are significant and impactful. His innovative patents and collaborations highlight his expertise and dedication to advancing the field. His work continues to influence the development of memory devices in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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