The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Mar. 10, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Shuichi Toriyama, Yokohama, JP;

Kenichi Murooka, San Jose, CA (US);

Shintaro Nakano, Kawasaki, JP;

Tatsuya Ohguro, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/249 (2013.01); H01L 45/06 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1226 (2013.01); H01L 45/1253 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes first conductive layers extending in a first direction and stacked in a second direction intersecting the first direction, a first semiconductor layer extending in the second direction and including a material having one of a first conductivity type and a second conductivity type, a first insulation layer disposed inside the first semiconductor layer, a second conductive layer disposed inside the first insulation layer, and a variable resistance layer disposed between the first conductive layers and the first semiconductor layer.


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