The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Sep. 19, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Haruka Sakuma, Yokkaichi, JP;
Shuichi Toriyama, Yokohama, JP;
Masumi Saitoh, Yokkaichi, JP;
Yoshiaki Fukuzumi, Yokkaichi, JP;
Naoki Yasuda, Mie, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A memory string includes: a first semiconductor layer formed in a columnar shape extending in a stacking direction perpendicular to a substrate; a tunnel insulating film formed surrounding a side surface of the first semiconductor layer; a charge accumulation film formed surrounding the tunnel insulating film and configured to be capable of accumulating charges; a block insulating film formed surrounding the charge accumulation film; and a plurality of first conductive layers formed surrounding the block insulating film and disposed at a predetermined interval in the stacking direction. The first semiconductor layer comprises carbon-doped silicon and being formed to have different carbon concentrations in upper and lower portions in the stacking direction.