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For the Inventor, By the Inventor

Boise, ID, United States of America

Shuang Meng

USPTO Granted Patents = 37 

Average Co-Inventor Count = 3.8

ph-index = 13

Forward Citations = 1,602(Granted Patents)


Location History:

  • Shanghai, CN (2012)
  • Boise, ID (US) (2005 - 2014)
  • Austin, TX (US) (2016 - 2022)

Company Filing History:

goldMedal27 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal10 out of 428 
 
Round Rock Research, LLC
 patents

Years Active: 2005-2022

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37 patents (USPTO):Explore Patents
1. 11335563 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2022-05-17),
2. 10607844 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2020-03-31),
3. 10096483 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2018-10-09),
4. 9761457 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2017-09-12),
5. 9305782 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2016-04-05),
6. 8852851 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2014-10-07),
7. 8816447 - Transistor with reduced depletion field width (2014-08-26),
8. 8791519 - High dielectric constant transition metal oxide materials (2014-07-29),
9. 8598632 - Integrated circuit having pitch reduced patterns relative to photoithography features (2013-12-03),
10. 8362576 - Transistor with reduced depletion field width (2013-01-29),
11. 8257497 - Insitu post atomic layer deposition destruction of active species (2012-09-04),
12. 8207576 - Pitch reduced patterns relative to photolithography features (2012-06-26),
13. 8129289 - Method to deposit conformal low temperature SiO2 (2012-03-06),
14. 8123968 - Multiple deposition for integration of spacers in pitch multiplication process (2012-02-28),
15. 8119535 - Pitch reduced patterns relative to photolithography features (2012-02-21),

Title: The Innovative Journey of Inventor Shuang Meng

Introduction: Shuang Meng, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Shuang Meng holds several patents in the areas of renewable energy technologies and sustainable solutions, showcasing his commitment to environmental innovation.

Career Highlights: With a background in engineering and a passion for problem-solving, Shuang Meng has successfully developed cutting-edge products that have revolutionized the industry.

Collaborations: Throughout his career, Shuang Meng has collaborated with leading research institutions and universities to further his inventions, demonstrating his dedication to advancing technology.

Conclusion: Inventor Shuang Meng's relentless pursuit of innovation and his remarkable contributions to the field make him a true pioneer in the world of inventions.

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