Shuang Meng

This inventor holds 37 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Micron Technology Incorporated, Round Rock Research, LLC. Active years: 2005-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuang Meng. Retrieved from https://idiyas.com/inventor/shuang-meng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 37 (Patent Applications = 2)

% Patents Active = 48.6

Average Co-Inventor Count = 3.8

ph-index = 13

Forward Citations = 1,614(Granted Patents)

Location History:

Shanghai, CN (2012)
Boise, ID (US) (2005 - 2014)
Austin, TX (US) (2016 - 2022)

Company Filing History:

27 out of 39,253

Micron Technology Incorporated

patents

10 out of 428

Round Rock Research, LLC

patents

Years Active: 2005-2022

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Areas of Expertise:

Pitch Reduction

Semiconductor Device

Atomic Layer Deposition

High Dielectric Materials

Transistor Design

Integrated Circuit

Microfeature Workpieces

Interconnect Fabrication

Spacer Integration

Low Temperature Deposition

Oxide Layer Formation

Active Species Destruction

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11335563 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2022-05-17),

2. 10607844 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2020-03-31),

3. 10096483 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2018-10-09),

4. 9761457 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2017-09-12),

5. 9305782 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2016-04-05),

6. 8852851 - Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same (2014-10-07),

7. 8816447 - Transistor with reduced depletion field width (2014-08-26),

8. 8791519 - High dielectric constant transition metal oxide materials (2014-07-29),

9. 8598632 - Integrated circuit having pitch reduced patterns relative to photoithography features (2013-12-03),

10. 8362576 - Transistor with reduced depletion field width (2013-01-29),

11. 8257497 - Insitu post atomic layer deposition destruction of active species (2012-09-04),

12. 8207576 - Pitch reduced patterns relative to photolithography features (2012-06-26),

13. 8129289 - Method to deposit conformal low temperature SiO2 (2012-03-06),

14. 8123968 - Multiple deposition for integration of spacers in pitch multiplication process (2012-02-28),

15. 8119535 - Pitch reduced patterns relative to photolithography features (2012-02-21),

Title: The Innovative Journey of Inventor Shuang Meng

Introduction: Shuang Meng, a talented inventor based in Boise, ID, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Shuang Meng holds several patents in the areas of renewable energy technologies and sustainable solutions, showcasing his commitment to environmental innovation.

Career Highlights: With a background in engineering and a passion for problem-solving, Shuang Meng has successfully developed cutting-edge products that have revolutionized the industry.

Collaborations: Throughout his career, Shuang Meng has collaborated with leading research institutions and universities to further his inventions, demonstrating his dedication to advancing technology.

Conclusion: Inventor Shuang Meng's relentless pursuit of innovation and his remarkable contributions to the field make him a true pioneer in the world of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: