The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2014

Filed:

Jan. 28, 2013
Applicant:

Round Rock Resarch, Llc, Mount Kisco, NY (US);

Inventors:

Shuang Meng, Boise, ID (US);

Garo J. Derderian, Boise, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

Assignee:

Round Rock Research, LLC, Jersey City, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

Devices such as transistors having an oxide layer that provide a depletion field in a conduction channel. A barrier layer is formed over the oxide layer. A gate electrode is formed over the barrier layer. The barrier layer and gate electrode are configured to reduce the width of the depletion field absent a voltage applied to the gate electrode.


Find Patent Forward Citations

Loading…