The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2013
Filed:
Jan. 14, 2011
Shuang Meng, Boise, ID (US);
Garo J. Derderian, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Round Rock Research, LLC, Mt. Kisco, NY (US);
Abstract
Atomic layer deposition is enhanced using plasma. Plasma begins prior to flowing a second precursor into a chamber. The second precursor reacts with a first precursor to deposit a layer on a substrate. The layer may include at least one element from each of the first and second precursors. The layer may be TaN, and the precursors may be TaFand NH. The plasma may begin during purge gas flow between a pulse of the first precursor and a pulse of the second precursor. Thermal energy assists the reaction of the precursors to deposit the layer on the substrate. The thermal energy may be greater than generally accepted for ALD (e.g., more than 300 degrees Celsius).