The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Oct. 05, 2006
John A. Smythe, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Brian J. Coppa, Boise, ID (US);
Shyam Surthi, Boise, ID (US);
Shuang Meng, Shanghai, CN;
John A. Smythe, Boise, ID (US);
Gurtej S. Sandhu, Boise, ID (US);
Brian J. Coppa, Boise, ID (US);
Shyam Surthi, Boise, ID (US);
Shuang Meng, Shanghai, CN;
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods of controlling critical dimensions of reduced-sized features during semiconductor fabrication through pitch multiplication are disclosed. Pitch multiplication is accomplished by patterning mask structures via conventional photoresist techniques and subsequently transferring the pattern to a sacrificial material. Spacer regions are then formed on the vertical surfaces of the transferred pattern following the deposition of a conformal material via atomic layer deposition. The spacer regions, and therefore the reduced features, are then transferred to a semiconductor substrate.