Inazawa, Japan

Shizuyo Asami



Average Co-Inventor Count = 6.4

ph-index = 10

Forward Citations = 487(Granted Patents)


Location History:

  • Aichi, JP (2004)
  • Nishikasugai-gun, JP (2003 - 2005)
  • Inazawa, JP (2002 - 2006)

Company Filing History:


Years Active: 2002-2006

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12 patents (USPTO):Explore Patents

Title: Shizuyo Asami: Innovator in Group III Nitride Compound Semiconductors

Introduction

Shizuyo Asami is a prominent inventor based in Inazawa, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the development of group III nitride compound semiconductors. With a total of 12 patents to her name, Asami has established herself as a key figure in her industry.

Latest Patents

Among her latest patents is a groundbreaking method for producing a group III nitride compound semiconductor device. This innovative process involves forming a separation layer made of a material that prevents the growth of group III nitride compound semiconductors on a substrate. The growth occurs on the uncovered surface of the substrate, ensuring optimal conditions for semiconductor development. Another notable patent details a method for improving the crystallinity of a second group III nitride compound semiconductor layer by heating a first layer in a specific gas atmosphere. This method enhances the quality of the semiconductor layers, which is crucial for their performance in electronic applications.

Career Highlights

Shizuyo Asami is currently employed at Toyoda Gosei Co., Ltd., where she continues to push the boundaries of semiconductor technology. Her work has not only advanced the field but has also contributed to the company's reputation as a leader in innovative materials.

Collaborations

Asami has collaborated with notable colleagues, including Jun Ito and Toshiaki Chiyo. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Shizuyo Asami's contributions to the field of group III nitride compound semiconductors exemplify her dedication to innovation and excellence. Her patents and collaborative efforts continue to shape the future of semiconductor technology.

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