The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2003
Filed:
Nov. 26, 2002
Applicant:
Inventors:
Naoki Shibata, Nishikasugai-gun, JP;
Toshiaki Chiyo, Nishikasugai-gun, JP;
Masanobu Senda, Nishikasugai-gun, JP;
Jun Ito, Nishikasugai-gun, JP;
Hiroshi Watanabe, Nishikasugai-gun, JP;
Shinya Asami, Nishikasugai-gun, JP;
Shizuyo Asami, Nishikasugai-gun, JP;
Assignee:
Toyoda Gosei Co., Ltd., Nishikasugai-gun, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the group III nitride semiconductor layer, the undercoat layer having a surface of a peak and trough structure.