The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2002
Filed:
Mar. 03, 2000
Applicant:
Inventors:
Jun Ito, Inazawa, JP;
Toshiaki Chiyo, Ama-gun, JP;
Naoki Shibata, Bisai, JP;
Hiroshi Watanabe, Ichinomiya, JP;
Shizuyo Asami, Inazawa, JP;
Shinya Asami, Inazawa, JP;
Assignee:
Toyoda Gosei Co., Ltd., Aichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/906 ;
Abstract
An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.
Ito, Jun. (2002). Group iii nitride compound semiconductor device (U.S. Patent No. 6426512). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6426512
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile