The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2005
Filed:
Apr. 24, 2003
Toshiaki Chiyo, Ama-gun, JP;
Naoki Shibata, Bisai, JP;
Masanobu Senda, Niwa-gun, JP;
Jun Ito, Inazawa, JP;
Shizuyo Asami, Inazawa, JP;
Shinya Asami, Inazawa, JP;
Hiroshi Watanabe, Ichinomiya, JP;
Toshiaki Chiyo, Ama-gun, JP;
Naoki Shibata, Bisai, JP;
Masanobu Senda, Niwa-gun, JP;
Jun Ito, Inazawa, JP;
Shizuyo Asami, Inazawa, JP;
Shinya Asami, Inazawa, JP;
Hiroshi Watanabe, Ichinomiya, JP;
Toyoda Gosei Co., Ltd., Nishikasugai-gun, JP;
Abstract
A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 μm is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.