The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Jun. 21, 2001
Naoki Shibata, Nishikasugai-gun, JP;
Toshiaki Chiyo, Nishikasugai-gun, JP;
Masanobu Senda, Nishikasugai-gun, JP;
Jun Ito, Nishikasugai-gun, JP;
Hiroshi Watanabe, Nishikasugai-gun, JP;
Shinya Asami, Nishikasugai-gun, JP;
Shizuyo Asami, Nishikasugai-gun, JP;
Naoki Shibata, Nishikasugai-gun, JP;
Toshiaki Chiyo, Nishikasugai-gun, JP;
Masanobu Senda, Nishikasugai-gun, JP;
Jun Ito, Nishikasugai-gun, JP;
Hiroshi Watanabe, Nishikasugai-gun, JP;
Shinya Asami, Nishikasugai-gun, JP;
Shizuyo Asami, Nishikasugai-gun, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer.