The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2006
Filed:
Nov. 06, 2001
Naoki Shibata, Bisai, JP;
Jun Ito, Inazawa, JP;
Toshiaki Chiyo, Ama-gun, JP;
Shizuyo Asami, Inazawa, JP;
Hiroshi Watanabe, Ichinomiya, JP;
Shinya Asami, Inazawa, JP;
Naoki Shibata, Bisai, JP;
Jun Ito, Inazawa, JP;
Toshiaki Chiyo, Ama-gun, JP;
Shizuyo Asami, Inazawa, JP;
Hiroshi Watanabe, Ichinomiya, JP;
Shinya Asami, Inazawa, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.