The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2003
Filed:
Jun. 26, 2001
Naoki Shibata, Nishikasugai-gun, JP;
Toshiaki Chiyo, Nishikasugai-gun, JP;
Masanobu Senda, Nishikasugai-gun, JP;
Jun Ito, Nishikasugai-gun, JP;
Hiroshi Watanabe, Nishikasugai-gun, JP;
Shinya Asami, Nishikasugai-gun, JP;
Shizuyo Asami, Nishikasugai-gun, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat layer has a surface which has a texture structure, or which is trapezoid shaped in section or which is pit shaped. In addition, a reflection layer made of nitride of at least one metal selected from the group consisting of titanium, zirconium, hafnium and tantalum may be formed on a surface of the undercoat layer. Also the surface of the reflection layer is formed as a texture structure, a trapezoid shape in section or a pit shape.