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For the Inventor, By the Inventor

Hachioji, Japan

Shiro Kamohara

This inventor holds 21 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Devices. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Hitachi, Ltd.. Active years: 2003-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiro Kamohara. Retrieved from https://idiyas.com/inventor/shiro-kamohara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 57.1

Average Co-Inventor Count = 4.4

ph-index = 5

Forward Citations = 97(Granted Patents)


Location History:

  • Hachioji, JP (2003 - 2006)
  • Hachiouji, JP (2003 - 2013)
  • Tokyo, JP (2007 - 2023)

Company Filing History:

goldMedal11 out of 7,661 
 
Renesas Electronics Corporation
 patents
silverMedal6 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal4 out of 42,752 
 
Hitachi, Ltd.
 patents

Years Active: 2003-2023

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Areas of Expertise:
Integrated Circuit
Wearable Device
IoT Edge Module
Power MISFET
4TSRAM
MOS Transistors
Substrate Bias Circuits
Manufacturing Method
Test Element Groups
SOTE
21 patents (USPTO):Explore Patents
1. 11676655 - Semiconductor integrated circuit device and wearable device (2023-06-13),
2. 11665640 - IoT edge module (2023-05-30),
3. 11391389 - Semiconductor device (2022-07-19),
4. 11373700 - Semiconductor integrated circuit device with SOTE and MOS transistors (2022-06-28),
5. 10311943 - Semiconductor integrated circuit device and wearable device (2019-06-04),
6. 10014067 - Semiconductor device and manufacturing method thereof (2018-07-03),
7. 9959924 - Semiconductor integrated circuit device and wearable device (2018-05-01),
8. 9646679 - Semiconductor device with mode designation and substrate bias circuits (2017-05-09),
9. 8482058 - Semiconductor device including a power MISFET (2013-07-09),
10. 8232595 - Semiconductor device including a power MISFET and method of manufacturing the same (2012-07-31),
11. 7982263 - Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate (2011-07-19),
12. 7180768 - Semiconductor memory device including 4TSRAMs (2007-02-20),
13. 7176523 - Power mosfet having conductor plug structured contacts (2007-02-13),
14. 7067889 - Method for manufacturing semiconductor integrated circuit device (2006-06-27),
15. 6881597 - Method of manufacturing a semiconductor device to provide a plurality of test element groups (TEGs) in a scribe region (2005-04-19),

Title: The Innovative Journey of Shiro Kamohara

Introduction: Shiro Kamohara, a distinguished inventor hailing from Hachiouji, Japan, has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents: Shiro Kamohara's latest patents include advancements in robotics, artificial intelligence, and sustainable energy solutions, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Shiro Kamohara has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the realm of technology.

Collaborations: Throughout his career, Shiro Kamohara has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of creativity and excellence in all his projects.

Conclusion: Shiro Kamohara's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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