The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Jun. 29, 2004
Applicants:
Akira Kotabe, Tokyo, JP;
Kenichi Osada, Tokyo, JP;
Masahiro Moniwa, Itami, JP;
Shiro Kamohara, Tokyo, JP;
Inventors:
Akira Kotabe, Tokyo, JP;
Kenichi Osada, Tokyo, JP;
Masahiro Moniwa, Itami, JP;
Shiro Kamohara, Tokyo, JP;
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a method of improving stability of a memory cell in read mode in an SRAM including a memory cell comprising two access MOS transistors and two drive MOS transistors. The magnitude of voltage between gate and source of an access transistor of a memory cell connected to a selected word line is controlled to be smaller than a power-supply voltage by controlling the voltage of selected word line WL in read mode.