Sayama, Japan

Masahiro Moniwa

This inventor holds 56 USPTO granted patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Renesas Technology Corp., Hitachi, Ltd., Renesas Electronics Corporation. Active years: 1987-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masahiro Moniwa. Retrieved from https://idiyas.com/inventor/masahiro-moniwa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 46.4

Average Co-Inventor Count = 5.3

ph-index = 16

Forward Citations = 950(Granted Patents)

Forward Citations (Not Self Cited) = 902(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hachioji, JP (1989)
  • Kokubunji, JP (1987 - 1991)
  • Hannou, JP (1992 - 1996)
  • Saitama, JP (2007)
  • Itami, JP (2007)
  • Tokyo, JP (2010 - 2013)
  • Sayama, JP (2000 - 2014)

Company Filing History:


Years Active: 1987-2014

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Areas of Expertise:
Semiconductor Memory
Integrated Circuit
Vertical MISFET
Data Storage
Trench-Type Capacitors
Manufacturing Method
Vertical Transistors
4TSRAMs
Semiconductor Technology
Circuitry
56 patents (USPTO):Explore Patents

Title: **Masahiro Moniwa: A Pioneer in Semiconductor Innovations**

Introduction

Masahiro Moniwa, based in Sayama, Japan, is a remarkable inventor in the field of semiconductor technology. With a substantial portfolio of 56 patents, Moniwa has made significant contributions to the development of sophisticated semiconductor memory devices, influencing advancements in electronic systems worldwide.

Latest Patents

Among his latest patents, Moniwa has developed a **semiconductor memory device and a method of manufacturing the same**. This innovative design features a memory cell utilizing SRAM technology, incorporating two drive MISFETs and two vertical MISFETs. Notably, the p-channel vertical MISFETs are strategically formed above the n-channel drive MISFETs. The construction involves a lamination process of lower, intermediate, and upper semiconductor layers, combined with a gate insulating film of silicon oxide, which enhances the device's performance through the implementation of perfect depletion type MISFETs.

Another critical contribution is the **semiconductor device and method of manufacturing the same**. This patent introduces an easy formation technique for a phase change film, aiming for high integration and utilizing the film as a memory element. In this device, a multi-layer structure of a phase change film and an electric conduction film is designed to enhance efficiency. The configuration allows for a parallel wiring system across the semiconductor substrate, facilitating effective current transmission.

Career Highlights

Masahiro Moniwa has had an illustrious career, working with prominent companies such as Renesas Technology Corporation and Hitachi, Ltd. His expertise in semiconductor technologies has not only propelled his own career but has also contributed to the advancement of the organizations he has been a part of.

Collaborations

Throughout his career, Moniwa has collaborated with esteemed colleagues, including Yasushi Koubuchi and Koichi Nagasawa. Their combined efforts have led to breakthroughs in semiconductor technologies and have significantly shaped the industry's landscape.

Conclusion

Masahiro Moniwa's ongoing innovations and substantial patent portfolio underscore his status as a leading figure in semiconductor technology. As advancements in memory devices and manufacturing methods continue to evolve, Moniwa's contributions will undoubtedly have a lasting impact on the electronics industry, paving the way for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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