The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2011
Filed:
Nov. 20, 2008
Masahiro Moniwa, Tokyo, JP;
Fumihiko Nitta, Tokyo, JP;
Masamichi Matsuoka, Tokyo, JP;
Satoshi Iida, Tokyo, JP;
Masahiro Moniwa, Tokyo, JP;
Fumihiko Nitta, Tokyo, JP;
Masamichi Matsuoka, Tokyo, JP;
Satoshi Iida, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.